Luminescence of localized-electron-state ensemble

LI Qing,XU Shi-Jie
DOI: https://doi.org/10.3321/j.issn:0379-4148.2006.08.008
2006-01-01
Physics
Abstract:The localization of carriers has a profound effect on the optical and electrical properties of solid state materials. It has been known for a long time that anomalous luminescence behavior is associated with the localization of carriers involved in the luminescence processes. Here we introduce a newly developed model for luminescence from localized-state ensembles. The theory is based on a new distribution function obtained by solving a rate equation. With this model we can not only quantitatively interpret anomalies observed in the temperature dependence of the localized-state luminescence but also clearly reveal the physical mechanisms behind them. Applications of the model in the quantitative analysis of the luminescence spectra in some typical materials are presented.
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