Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor
Hai-Shan Zhang,Lin Shi,Zheng-Hui Liu,Geng-Zhao Xu,Wen-Tao Song,Ya-Kun Wang,Zhong-Jie Xu,Xiao-Bao Yang,Yu-Jun Zhao,Xue-Lin Yang,Bo Shen,Lin-Wang Wang,Ke Xu,Zhenghui Liu,Gengzhao Xu,Wentao Song,ya-kun wang,zhong-jie xu,Xiaobao Yang,Yujun Zhao,Xuelin Yang
DOI: https://doi.org/10.1039/d2tc02164a
IF: 6.4
2022-08-16
Journal of Materials Chemistry C
Abstract:The dynamic competition of deep defect levels related to recombination processes is a crucial factor for a wide range of applications in semiconductors, however the time-resolved luminescence spectroscopies are very complex and challenging for clear explanations, and in time-resolved photoluminescence (TRPL) experiments, it is difficult for a single instrument to observe the decay processes across several orders of magnitude simultaneously. Based on the Shockley-Read-Hall (SRH) model, we present a method to simulate the defects-related TRPL processes in time scales ranging from picosecond to millisecond scale. Our approach considers the competition among the band edge and defects-related radiative and nonradiative recombination channels. In an n -type GaN sample, we demonstrate that following a pulse laser excitation, the substitutional defect C N related yellow luminescence (YL) exhibits a double-exponential decay. The fast decay on the hundreds of the picoseconds is due to the band edge emission (BE), while the well-known slow decay at the microseconds is induced by electron relaxation from the conduction band to the defect state. The fast and slow decay lifetimes of YL in verification experiments are all in good agreement with our simulated results. This work provides an explicit physical picture of defect-related luminescence and the competition of different recombination channels in GaN.
materials science, multidisciplinary,physics, applied