Abstract:In this work, we show that extraction of the true bulk lifetime from the biexponential decay that follows from low initial carrier density photoluminescence decay experiments is not generally possible, and introduce new models to enable extraction of the bulk lifetime in the case where the initial carrier density exceeds the doping level. From measurements with high initial carrier density, we establish quasi-equilibrium between localized and free carrier states and accurately measure the bulk lifetime. Using our new models, we measure the time constants associated with localization processes as well as nonradiative and radiative bulk recombination in our GaAs double heterostructures grown with molecular beam epitaxy from experiments with varied excitation strength providing initial carrier densities that range from around 1014 to 1017 cm–3. We demonstrate that this approach can be applied to lightly doped (1016 cm–3) materials where the strongest excitation yields initial carrier densities that exceed the doping level. In our n-type sample, we report lifetime values of (22.7 ± 0.1) ns for bulk recombination, (73 ± 1) ns for trap-capture, (51 ± 2) ns for trap-emission, and (63 ± 2) ns for trap-decay, with a low-level injection effective radiative efficiency of (27.5 ± 0.7)%. In our p-type sample, we report lifetime values of (78.9 ± 0.3) ns for bulk recombination, (77.5 ± 0.7) ns for trap-capture, (530 ± 10) ns for trap-emission, and (177 ± 4) ns for trap-decay, with a low-level injection effective radiative efficiency of (47.0 ± 0.8)%. In comparison with the long and short lifetimes extracted from the biexponential decay with weak excitation, the mean bulk lifetime measured with strong excitation was (33 ± 2)% and (53 ± 1)% longer than the short lifetime, and (68 ± 4)% and (103 ± 3)% shorter than the long lifetime in our n-type and p-type samples, respectively. In our n-type sample, the extracted low-level injection nonradiative lifetime was (33 ± 1) ns, and it was observed to remain constant with the injection level. In our p-type sample, the high-level injection nonradiative lifetime was measured to be (30 ± 30)% larger than the low-level injection nonradiative lifetime of (140 ± 2) ns.

Effective Photon Recycling and Super Long Lived Minority Carriers in GaInP/GaAs Heterostructure Solar Cell: A Time-Resolved Optical Study

Effective Lifetimes of Minority Carriers in Time-Resolved Photocurrent and Photoluminescence of a Doped Semiconductor: Modelling of a GaInP Solar Cell

Storage and transfer of optical excitation energy in GaInP epilayer: Photoluminescence signatures

Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells

Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 - Impact of front surface recombination and its temperature dependence

Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process

Super Transverse Diffusion of Minority Carriers in Ga X in 1 − X P/GaAs Double-Junction Tandem Solar Cells

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Sub‐second Lifetime of Photocarriers in Hybrid Lead Halide Perovskite

Effective lifetime of non‐equilibrium carriers in perovskite‐inspired Cu2AgBiI6

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Electroluminescence Probe of Internal Processes of Carriers in Gainp Single Junction Solar Cell

Reduction of non-radiative recombination by inserting a GaAs strain-relaxation interlayer in InGaAs/GaAsP superlattice solar cells investigated by photo-thermal spectroscopy

Carrier Diffusion and Mid-Way Recombination in GaInP2/GaAs Multijunction Photovoltaic Device

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Effective Steady‐State Recombination Decay Times in Comparison to Time‐Resolved Photoluminescence Decay Times in Halide Perovskite Solar Cells

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

Carrier Lifetimes in Polar InGaN-based LEDs

Nongeminate Recombination in Planar and Bulk Heterojunction Organic Solar Cells