Abstract:In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

Carrier Diffusion and Mid-Way Recombination in GaInP2/GaAs Multijunction Photovoltaic Device

Super Transverse Diffusion of Minority Carriers in Ga X in 1 − X P/GaAs Double-Junction Tandem Solar Cells

Effective Photon Recycling and Super Long Lived Minority Carriers in GaInP/GaAs Heterostructure Solar Cell: A Time-Resolved Optical Study

Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells

Carrier Recombination Dynamics of MBE Grown InGaAsP Layers with 1ev Bandgap for Quadruple-Junction Solar Cells

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Carriers Transport Properties in GaInP Solar Cells Grown by Molecular Beam Epitaxy

Electroluminescence Probe of Internal Processes of Carriers in Gainp Single Junction Solar Cell

Study on non-radiative recombination centers in GaInP sub-cell of electron-irradiated triple junction solar cells based on photoluminescence measurements

Effect of carrier recombination mechanisms on the open circuit voltage of n + -p GaInAsSb thermophotovoltaic cells

Effective Lifetimes of Minority Carriers in Time-Resolved Photocurrent and Photoluminescence of a Doped Semiconductor: Modelling of a GaInP Solar Cell

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Anisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells

Infrared Radiation Induced by Photocarrier Recombination in Solar Cells

Dynamics of Photoexcited Carriers in AlxGa1−xN/GaN Double Heterostructures

Unusual hot carrier effect and improved carrier extraction observed in asymmetric dilute-nitride quantum-engineered solar cells through photoluminescence (PL) and external quantum efficiency (EQE) measurements

(Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Charge-carrier dynamics in polycrystalline thin-film CuIn1−xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

Influence of Temperature and Reverse Bias on Photocurrent Spectrum and Supra-Bandgap Spectral Response of Monolithic GaInP/GaAs Double-Junction Solar Cell