Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications

H. P. Piyathilaka,R. Sooriyagoda,V. R. Whiteside,T. D. Mishima,M. B. Santos,I. R. Sellers,A. D. Bristow

DOI: https://doi.org/10.48550/arXiv.2112.14502

2022-04-12

Abstract:Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improves their applicability for hot-carrier photovoltaic applications. The transport results illustrate that the AC photoconductivity is larger in the dynamic regime corresponding to the metastability as a result of higher excitation photocarrier densities. In this excitation regime, the AC photoconductivity is accompanied by slightly lower carrier mobility, arising from the plasma-like nature of carriers scattered by Auger recombination. Outside of this regime, higher mobility is observed as a result of a lower excitation density that is more readily achievable by solar concentration. Additionally, at ambient temperatures, more scattering events are accompanied by slightly lower mobility, but the excitation dependence indicates that this is accompanied by an ambipolar diffusion length that is greater than half a micron. These transport properties are consistent with good quality inorganic elemental and III-V semiconductor solar cells and far exceed those of novel materials. The transport results complement the dynamics observed in type-II InAs/AlAsSb and can guide the design of hot-carrier solar cells based on these and related materials.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to optimize the design and performance of hot - carrier solar cells (HCSC) based on type - II InAs/AlAsSb multi - quantum - well (MQW) structures by studying the non - equilibrium hot - carrier transport characteristics**.

Specifically, the authors focus on the transport behavior of photo - excited carriers in these multi - quantum - well structures under different lattice temperatures and photo - excitation conditions. By analyzing these characteristics, they hope to understand the following aspects:

1. **Hot - carrier lifetime and mobility**: Understand the carrier lifetime and mobility under different conditions, especially whether there are metastable states at high excitation energies and the influence of these metastable states on carrier transport.

2. **Carrier dynamics and recombination mechanisms**: Explore the dynamic behavior of carriers at different temperatures and excitation energies, including processes such as Auger scattering, radiative recombination, and Shockley - Read - Hall recombination, to determine which mechanisms dominate the behavior of carriers.

3. **Possibility of hot - carrier extraction**: Evaluate whether hot - carriers can be effectively extracted at high excitation energies, thereby improving the energy conversion efficiency of solar cells.

4. **Optimization of material properties**: Provide theoretical basis and technical guidance for designing more efficient hot - carrier solar cells by studying the carrier transport characteristics in these multi - quantum - well structures.

### Research methods
To achieve the above goals, the authors used femtosecond optical pump pulses and terahertz (THz) probe pulses to measure the AC photoconductivity of the samples. This method can measure the complex conductivity in heterostructures without contact and track the dynamic process of carrier transport. By fitting the Plasmon model, they were able to extract key parameters such as carrier density and mobility.

### Main findings
- At low temperatures and high excitation energies, the samples exhibit a metastable state, which leads to higher photoconductivity but slightly reduces the carrier mobility.
- As the temperature increases, the carrier lifetime is extended, the ambipolar diffusion length is increased, and the mobility slightly decreases.
- At lower excitation densities, the carrier transport is independent of temperature, indicating that these structures have good application prospects under moderate sunlight concentration conditions.
- Compared with organic and hybrid perovskite solar cells, the carrier mobility of these type - II InAs/AlAsSb structures is significantly higher.

### Conclusion
Through this study, the authors revealed the transport characteristics of hot - carriers in type - II InAs/AlAsSb multi - quantum - well structures and proposed new ideas for optimizing the design of hot - carrier solar cells. These findings provide important theoretical support and technical guidance for further improving the energy conversion efficiency of solar cells.