Abstract:There has been approximately equal work on the two major projects in Third Generation in 2010. These are the Group IV nanostructure tandem cells project the “all-Si” tandem cell and the Hot Carrier solar cell project, with its continuing funding from GCEP (Global Climate and Energy Project). There has also been further work on Up-conversion and on Plasmonics. The Si nanostructure work has seen increased understanding of the mechanisms for transport and quantum confinement. More sophisticated modelling of both has been tied more directly to improved interpretation of experimental results. This has led to establishment of a predictive ‘equivalent circuit modeller’ which will allow optimisation of Si QD device parameters to maximise transport and performance in the photovoltaic devices. Improved models for the understanding of doping effects in these materials have also been established. Work on alternate matrices for Si quantum dots, in both silicon nitride and carbide, has seen development of composite structures which have improved transport in the growth direction, whilst maintaining quantum confinement in the plane, but which also increase the uniformity of QD sizes. Work on Ge nanostructures has also improved with high electrical p-type conductivity established for Ge quantum dots and excellent pseudo single crystalline growth quality for Ge quantum wells in a nitride matrix. Heterojunction photovoltaic devices combining the advantages of two of these different material types are now being investigated. Hot Carrier cells have seen very significant improvement in demonstrated resonance in energy selective contacts using Si nanostructure layers, as well as a development of 2 and 3D modelling of transport in these structures. Modelling of Hot Carrier efficiencies continues to get more sophisticated with application to real material systems such as III-nitrides and inclusion of Auger processes which become significant at high carrier concentrations. Work on absorbers has allowed modelling of the phononic properties of a range of bulk materials, in conjunction with time resolved photoluminescence measurement of carrier cooling in some of these materials. Also modelling of coherent nanoparticle nanostructures, which emulate the phononic properties required, has developed into direct application to structures grown directly. These structures include the University Staff: • A/Prof. Gavin Conibeer (group leader) • Dr Richard Corkish • Prof. Martin Green Senior Research Fellows:

Unusual hot carrier effect and improved carrier extraction observed in asymmetric dilute-nitride quantum-engineered solar cells through photoluminescence (PL) and external quantum efficiency (EQE) measurements

2 modelling of quantum confinement and tunnelling transport Researchers :

Impact of excitation energy on hot carrier properties in InGaAs MQW structure

Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications

Study of the Mechanisms of the Phonon Bottleneck Effect in CdSe/CdS Core/shell Quantum Dots and Nanoplatelets and Their Application in Hot Carrier Multi-Junction Solar Cells

Carrier Recombination Dynamics of MBE Grown InGaAsP Layers with 1ev Bandgap for Quadruple-Junction Solar Cells

Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors*

Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells

(Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes

Study the mechanisms of phonon bottleneck effect in CdSe/CdS core/shell quantum dots and nanoplatelets and their application for hot carrier multi-junction solar cells

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Unusual Carrier Thermalization in a Dilute Ga As 1 − X N X Alloy

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires

Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Long-Lived Hot Carriers in III-V Nanowires.

Gaas/Algaas Quantum Wells with Indirect-Gap Algaas Barriers for Solar Cell Applications

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells