Study the mechanisms of phonon bottleneck effect in CdSe/CdS core/shell quantum dots and nanoplatelets and their application for hot carrier multi-junction solar cells

Yi Zhang,Wenbin Xiang,Rui Wang,Jiayu Zhang,Gavin Conibeer
DOI: https://doi.org/10.1039/d3na00557g
IF: 5.598
2023-09-13
Nanoscale Advances
Abstract:The hot carrier multi-junction solar cell (HCMJSC) is one of promising advanced conceptual solar cells with theoretical efficiency greater than 65%, consisting of a thin top junction with wide bandgap and a thicker junction at bottom with medium bandgap for high and low energy photons absorption. The wide bandgap CdSe/CdS low-dimensional systems (e.g. quantum dots, QDs and nanoplatelets, NPLs) widely used in optoelectrical devices are expected to be an appropriate candidate for the top junction. However, the mechanisms underlying the carrier relaxation rate reduction (or phonon bottleneck effect, PBE) for HCMJSC in these material systems are not well understood so far. In this work, the carriers relaxation mechanisms in CdSe/CdS core/shell QDs and NPLs are quantitatively analyzed by calculating thermalization coefficient (Qth) through steady state photoluminescence (SSPL) and picosecond-time resolved photoluminescence (ps-TRPL). A significantly extended carrier relaxation time of more than 20 ns was observed in the TRPL of QDs. This could be attributed to both of the Auger reheating (AR) at initial fast decay stage and acoustic phonon folding at slow decay stage. For SSPL, Qth value of QDs is much lower due to 1 order magnitude higher AR rate.A strong coupling may exist between AR and Qth with a high probability of PBE, where a lower Qth gives a higher AR rate. The AR may dominate carrier thermalization if PBE level is high. Whereas, the other mechanisms like acoustic phonon folding will also affect the carrier relaxation if PBE is at a much lower level.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
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