Electroluminescence Probe of Internal Processes of Carriers in Gainp Single Junction Solar Cell

Z. C. Su,S. J. Xu,R. X. Wang,J. Q. Ning,J. R. Dong,S. L. Lu,H. Yang

DOI: https://doi.org/10.1016/j.solmat.2017.04.041

IF: 6.9

2017-01-01

Solar Energy Materials and Solar Cells

Abstract:In this article, we present an in-depth study of the internal physical processes of carriers in a GaInP solar cell under forward bias by investigating the electroluminescence (EL) signature. Overall, it is found that the device shows nonlinear EL dependence on the injection current and hence the carrier concentration at all the examined temperatures. At low temperatures, the EL spectra are featured by an asymmetric luminescence band with low energy tail, showing that the electrically injected carriers always prefer to occupy the local extended states with lower potential energies first. As the injection current and hence carrier density increases, two physical effects become apparent: state filling and carrier transfer. The former results in a significant Burstein-Moss shift of the first EL band, while the latter leads to the second luminescence band with higher energy, being an optical evidence of existence of the Mott mobility edge. With the aid of localized-state ensemble (LSE) luminescence model, we can quantitatively describe the effects of injection current on the state filling and transfer of carriers in terms of a Fermi-level-like energy level. Furthermore, the spectral data analysis indicates that self-absorption of the emitted photons could be an important process in the solar cell.