Abstract:This dissertation presents a serial study on optical properties of different semiconductor materials. Three main types of studies are addressed: The role of doping levels of N and Al atoms in the room-temperature photoluminescence (PL) of 4H-SiC films for optoelectronic applications; the use of a basic Monte Carlo method combined with probability calculations of the time-dependent Schroedinger equation to manifest multi-photon absorption and emission of II-VI compound quantum dots (QDs) for bioimaging; a theoretical quantum chemistry approach to study of structure and optical properties of InGaAsN and GaAs clusters for laser technology applications. 4H-SiC films were grown on AlN/SiC(100) substrates by a chemical vapour deposition (CVD) system. Three well-defined room-temperature PL peaks close to the band-gap energy were observed. By a detailed theoretical analysis of optical transitions in the samples, it was found that the PL peaks are most probably due to the optical transitions between impurity levels and band edges, and the transition between the second minimum of the conduction band and the top of the valance band. Special attention has been paid to effects of doping levels of N and Al impurities. Optical transitions in several II-VI semiconductor QDs have been studied by a quantum Monte Carlo method. We model the QD energy band structure by a spherical square quantum well and the electrons in the conduction band and holes in the valence band by the effective mass approximation. The optical probabilities of optical transitions induced by ultrafast and ultraintense laser pulses are calculated from the time-dependent Schroedinger equation. With the inclusion of the nonradiative electron-phonon processes, the calculated absorption and emission spectra are in agreement with experimental work. The dynamic processes and up-conversion luminescence of the QDs, required for many applications including bio-imaging, are demonstrated. Quantum chemistry is used to study InGaAsN and GaAs nano systems. The molecular structures of a series of dilute-nitride zinc blende InGaNAs clusters are examined from the energy point of view with a semi-empirical method. The optimum cluster configurations are identified by which we can identify the detailed bonding structures and the effects of In mole fraction. After proper geometry construction, an effective central insertion scheme has been implemented to study the electronic band structures of GaAs at the first-principles level. The formation of energy bands and quantum confinement effects have been revealed, thus providing theoretical support for laser design.

2 modelling of quantum confinement and tunnelling transport Researchers :

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

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Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Characterisation and SILVACO modelling of Photovoltaic devices based on III-V semiconductors material

Unusual hot carrier effect and improved carrier extraction observed in asymmetric dilute-nitride quantum-engineered solar cells through photoluminescence (PL) and external quantum efficiency (EQE) measurements

Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

Study of the Mechanisms of the Phonon Bottleneck Effect in CdSe/CdS Core/shell Quantum Dots and Nanoplatelets and Their Application in Hot Carrier Multi-Junction Solar Cells

Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications

Quantum Chemistry Study of Energy Band Structures of GaAs Nano Clusters

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Study the mechanisms of phonon bottleneck effect in CdSe/CdS core/shell quantum dots and nanoplatelets and their application for hot carrier multi-junction solar cells

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

TOPcon route with quantum wells in GaInP/Si dual junction cell for efficiency enhancement

Effects of Interface Roughness and Embedded Nanostructures on Device Properties

Optical design and bandgap engineering in ultrathin multiple quantum well solar cell featuring photonic nanocavity

Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSb p-n heterojunctions: insights from ab-initio DFT+NEGF studies

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors