Abstract:There has been approximately equal work on the two major projects in Third Generation in 2010. These are the Group IV nanostructure tandem cells project the “all-Si” tandem cell and the Hot Carrier solar cell project, with its continuing funding from GCEP (Global Climate and Energy Project). There has also been further work on Up-conversion and on Plasmonics. The Si nanostructure work has seen increased understanding of the mechanisms for transport and quantum confinement. More sophisticated modelling of both has been tied more directly to improved interpretation of experimental results. This has led to establishment of a predictive ‘equivalent circuit modeller’ which will allow optimisation of Si QD device parameters to maximise transport and performance in the photovoltaic devices. Improved models for the understanding of doping effects in these materials have also been established. Work on alternate matrices for Si quantum dots, in both silicon nitride and carbide, has seen development of composite structures which have improved transport in the growth direction, whilst maintaining quantum confinement in the plane, but which also increase the uniformity of QD sizes. Work on Ge nanostructures has also improved with high electrical p-type conductivity established for Ge quantum dots and excellent pseudo single crystalline growth quality for Ge quantum wells in a nitride matrix. Heterojunction photovoltaic devices combining the advantages of two of these different material types are now being investigated. Hot Carrier cells have seen very significant improvement in demonstrated resonance in energy selective contacts using Si nanostructure layers, as well as a development of 2 and 3D modelling of transport in these structures. Modelling of Hot Carrier efficiencies continues to get more sophisticated with application to real material systems such as III-nitrides and inclusion of Auger processes which become significant at high carrier concentrations. Work on absorbers has allowed modelling of the phononic properties of a range of bulk materials, in conjunction with time resolved photoluminescence measurement of carrier cooling in some of these materials. Also modelling of coherent nanoparticle nanostructures, which emulate the phononic properties required, has developed into direct application to structures grown directly. These structures include the University Staff: • A/Prof. Gavin Conibeer (group leader) • Dr Richard Corkish • Prof. Martin Green Senior Research Fellows:

Characterisation and SILVACO modelling of Photovoltaic devices based on III-V semiconductors material

2 modelling of quantum confinement and tunnelling transport Researchers :

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

High-efficiency InP-based Multijunction Solar Cells

Numerical Simulation of C-V and I-V Characteristics of Perovskite Based Solar Cells

Modelling of Perovskite/ingaas Tandem Solar Cells

Multi-Terminal GaInP/GaInAs/Ge Solar Cells for Subcells Characterization

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells

Designing III-V Multijunction Solar Cells on Silicon

Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells

Modeling of novel lateral AlGaAs/GaAs quantum well solar cell

Electronic structure and non-linear optical properties of organic photovoltaic systems with potential applications on solar cell devices: A DFT approach

Enhancing Multi-Junction Solar Cell Performance: Advanced Predictive Modeling and Cutting-Edge CIGS Integration Techniques

Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells

Next Generation Quantum Dots Based Multijunction Photovoltaics

Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges

Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

A Modeling Framework to Quantify the Intermediate Layer Impact in III-V//Si Multijunction Solar Cells