Design, Modeling and Fabrication of Nanostructure Devices for Optoelectronic Applications

Subhrajit Sikdar

2023-05-11

Abstract:The current research work encompasses design modelling and fabrication of vertically aligned nanowire metal oxide semiconductor based voltage tunable quantum dot devices for optoelectronic applications. A novel device scheme is proposed for developing such VTQDs by combining the effects of nanowire geometry dependent structural confinement in transverse directions and the voltage assisted surface quantization in longitudinal direction. The formation of VTQDs near oxide/semiconductor interface at room temperature is predicted by developing a self consistent quantum electrostatic simultaneous solver. The photogeneration phenomenon and carrier transport in nanowire MOS based VTQD devices is analytically modelled by adopting non equilibrium Greens formalism based on second quantization field operators for incident photons and generated photocarriers. Engineering the combined effects of structural and electrical quantization has enabled a route for developing wavelength selective direct colour sensors with high spectral resolution. The developed NEGF based analytical model is further extended to obtain photocurrent which can be utilized for harvesting solar energy. A design window is also proposed for obtaining the desired values of solar cell performance parameters with the optimized device parameters such as, the nanowire diameter and oxide thickness. Finally, a patterned array of such nanowire MOS based VTQD devices is fabricated by employing electron beam lithography. The step like behaviour in capacitance voltage characteristics of such devices measured in situ within the FESEM chamber confirms the formation of VTQDs at room temperature. Such patterned nanowire MOS based VTQD devices can be utilized for the advanced photosensing and solar energy harvesting applications.

Applied Physics,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to design, model and fabricate vertically - aligned nanowire metal - oxide - semiconductor (MOS) - based voltage - tunable quantum dot (VTQD) devices for optoelectronic applications. Specifically, the authors propose a novel device scheme to develop such VTQDs by combining the structural confinement effect of the nanowire geometry in the lateral (radial) direction and the effect of voltage - assisted surface quantization in the longitudinal direction. The following are the specific problems attempted to be solved in the paper:

1. **Quantum dot formation**: Investigate how to predict the formation of VTQDs near the oxide/semiconductor interface at room temperature through a self - consistent quantum electro - electrostatic simultaneous solver.

2. **Electrical performance optimization**: The electrical performance of these devices has been studied in detail. It has been found that selecting "high effective mass (high - m*)" materials can better maintain the integrity of the electro - static force than "high - dielectric - constant (high - k)" materials, thereby maintaining electro - static force control and reducing the carrier tunneling probability simultaneously.

3. **Photo - generation and transport**: Using the second - quantized field operator based on the non - equilibrium Green's function (NEGF) formalism, the photo - generation phenomenon and carrier transport in nanowire MOS - based VTQD devices are analytically modeled.

4. **Color sensor design**: By exploring the combined effects of engineered structures (lateral direction) and electrical quantization (longitudinal direction), a way to develop a wavelength - selective direct color sensor with high spectral resolution is explored.

5. **Solar cell efficiency improvement**: By utilizing the resonance between the incident photon mode and the energy gap between the three - dimensionally - quantified conduction - band electron states and the two - dimensionally - quantified valence - band hole sub - bands, a way to achieve a high power - conversion efficiency beyond the Shockley - Queisser limit is proposed, and a design window is proposed to obtain optimized device parameters (such as nanowire diameter and oxide - layer thickness) to achieve the desired solar - cell performance parameters.

6. **Device fabrication and characterization**: Patterned arrays of such nanowire MOS - based VTQD devices are fabricated by electron - beam lithography (EBL) technology, and the EBL process is optimized to achieve the desired device size. The formation of VTQDs at room temperature is confirmed by in - situ measurement in the FESEM chamber.

In summary, this paper aims to solve key problems in optoelectronic applications, especially in advanced optical sensing and solar energy harvesting, by designing, modeling and fabricating novel vertically - aligned nanowire MOS - based VTQD devices.