Engineering nanowire quantum dots with iontronics

Domenic Prete,Valeria Demontis,Valentina Zannier,Lucia Sorba,Fabio Beltram,Francesco Rossella

2024-06-24

Abstract:Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gating. Our approach is found to enable the realization and control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb blockade peaks and their dependence on an externally applied magnetic field are reported, together with the impact of device architecture and confinement potential on quantum dot quality. Devices incorporating two identical quantum dots in series are realized, addressing the reproducibility of the developed approach. The iontronic quantum dot represents a novel class of zero-dimensional quantum devices engineered to overcome the need for thin dielectric layers, facilitating single-step device fabrication. Overall, the reported approach holds the potential to revolutionize the development of functional quantum materials and devices, driving rapid progress in solid state quantum technologies

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve stable, high - quality quantum dots in semiconductor nanostructures, especially in the case where it is difficult to balance ease of implementation, scalability and quantum transport performance in the traditional solid - state device manufacturing paradigm. Specifically:

1. **Existing Challenges**: Traditional methods for manufacturing semiconductor quantum dots are complex and it is difficult to simultaneously achieve ease of implementation, scalability and excellent quantum transport characteristics.

2. **Proposed New Method**: The author introduced a new quantum dot engineering method based on ion gating technology, called "iontronic quantum dot". This method defines and controls quantum dots by accumulating negative ions at the interface between the nanowire and the electrolyte.

3. **Objectives**:
- To achieve a high - quality zero - dimensional quantum system without relying on complex multi - step manufacturing processes.
- To provide a new way to manipulate and study quantum phenomena in semiconductors, thereby promoting the development of solid - state quantum technology.
- To demonstrate the scalability of this new method, for example, implementing multiple quantum dots on the same nanowire.

4. **Innovations**:
- By using the strong electric field generated by the ionic liquid, high - quality quantum dots can be achieved in a single step.
- By adjusting parameters such as the ion gate voltage and the width of the confinement finger, the quality and characteristics of the quantum dots can be optimized.
- Experimental results show that the performance of iontronic quantum dots can be comparable to that of hard - wall quantum dots and can maintain high stability at low temperatures.

In summary, this paper aims to overcome the limitations in traditional methods by introducing ion gating technology, achieve simpler and higher - quality manufacturing of semiconductor quantum dots, and demonstrate its potential applications in quantum computing and other quantum information platforms.