Abstract:The hot carrier multi-junction solar cell (HCMJSC) is one of the promising advanced conceptual solar cells with theoretical efficiency greater than 65%, consisting of a thin top junction with a wide bandgap and a thicker junction at the bottom with a medium bandgap for absorption of high and low energy photons. The wide bandgap CdSe/CdS low-dimensional systems (e.g. quantum dots, QDs and nanoplatelets, NPLs) widely used in optoelectrical devices are expected to be an appropriate candidate for the top junction. However, the mechanisms underlying the carrier relaxation rate reduction (or phonon bottleneck effect, PBE) for HCMJSC in these material systems are not well understood so far. In this work, the carrier relaxation mechanisms in CdSe/CdS core/shell QDs and NPLs are quantitatively analyzed by calculating the thermalization coefficient (Qth) through steady state photoluminescence (SSPL) and picosecond-time resolved photoluminescence (ps-TRPL). A significantly extended carrier relaxation time of more than 20 ns was observed in the TRPL of QDs. This could be attributed to both the Auger reheating (AR) at the initial fast decay stage and acoustic phonon folding at the slow decay stage. For SSPL, the Qth value of QDs is much lower due to a 1 order of magnitude higher AR rate. A strong coupling may exist between AR and Qth with a high probability of PBE, where a lower Qth gives a higher AR rate. The AR may dominate carrier thermalization if the PBE level is high. Meanwhile, other mechanisms like acoustic phonon folding will also affect the carrier relaxation if the PBE is at a much lower level. This work quantitatively elucidates the phonon bottleneck effect mechanisms in CdSe/CdS QDs and NPLs via thermalization coefficient (Qth) for the first time, significantly simplifying the candidate estimation of hot carrier multijunction solar cells.

Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications

Impact of excitation energy on hot carrier properties in InGaAs MQW structure

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures

Modulating Hot Carrier Cooling and Extraction with A-site Organic Cations in Perovskites.

Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires

Impacts of Ambipolar Carrier Escape on Current-Voltage Characteristics in a Type-I Quantum-Well Solar Cell

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Coherent Phonons-Driven Hot Carrier Effect in a Superlattice Solar Cell

Study of the Mechanisms of the Phonon Bottleneck Effect in CdSe/CdS Core/shell Quantum Dots and Nanoplatelets and Their Application in Hot Carrier Multi-Junction Solar Cells

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Hot Carrier Dynamics in Operational Metal Halide Perovskite Solar Cells

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors*

Study the mechanisms of phonon bottleneck effect in CdSe/CdS core/shell quantum dots and nanoplatelets and their application for hot carrier multi-junction solar cells

Hot-carrier generation in a solar cell containing InAs/GaAs quantum-dot superlattices as a light absorber

Type-II InAs/GaAsSb Quantum Dot Solar Cells with GaAs Interlayer

A review on thermalization mechanisms and prospect absorber materials for the hot carrier solar cells