Abstract:Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1−xInP (x ≤ 0.35) strained-multiple-quantum wells

Differential Reflection Dynamics in InAsxP1−x/InP (x⩽0.35) Strained-Multiple-quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Effect of Interface Roughness and Well Width on Differential Reflection Dynamics in Ingaas/Inp Quantum Wells

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Alloy Composition Dependence of Photoexcited Carrier Dynamics in GaxIn1−xP/InP:Fe (X<0.18)

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Carrier Capture into InAs/GaAs Quantum Dots Detected by a Simple Degenerate Pump–probe Technique

Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment