Abstract:Gallium nitride (GaN) is a key material in blue light-emitting devices and is recognized as one of the most important semiconductors after Si. Its outstanding thermal conductivity, high saturation velocity, and high breakdown electric field have enabled the use of GaN for high-power and high-frequency devices. Although lots of researches have been done on the optical and optoelectrical properties of GaN, the defect-related ultrafast dynamics of the photo-excitation and the relaxation mechanism are still completely unclear at present, especially when the photo-generated carrier concentration is close to the defect density in n-type GaN. The transient absorption spectroscopy has become a powerful spectroscopic method, and the advantages of this method are contact-free, highly sensitive to free carriers, and femtosecond time resolved. In this article, by employing optical pump and infrared probe spectroscopy, we investigate the ultrafast photo-generated carriers dynamics in representative high-purity n-type and Ge-doped GaN (GaN:Ge) crystal. The transient absorption response increased as probe wavelengths increased, and hole-related absorption was superior to electron-related absorption, especially at 1050 nm. The transient absorption kinetics in GaN:Ge appeared to be double exponential decay under two-photon excitation. By modelling the carrier population dynamics in energy levels, which contained both radiative and non-radiative defect states, the carrier dynamics and carrier capture coefficients in GaN: Ge can be interpreted and determined unambiguously. The faster component (30–60 ps) of absorption decay kinetics corresponded to the capturing process of holes by negatively charged acceptor CN. However, the capturing process was limited by the recombination of electron and trapped holes under higher excitation after the saturation of deep acceptors. As a result, the slower component decayed slower as the excitation fluence increased. Moreover, the experimental and theoretical results found that, the carrier lifetime in n-GaN can be modulated by controlling the defect density and carrier concentration under a moderate carrier injection, making GaN applicable in different fields such as LED and optical communication.

Dynamics of Photoexcited Carriers in AlxGa1−xN/GaN Double Heterostructures

Localized Exciton Dynamics in AlInGaN Alloy

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Effect of Carrier Confinement on Photoluminescence from Modulation-Doped AlxGa1−xN/GaN Heterostructures

Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Neutral-Donor-Bound Exciton Recombination Dynamics in Gan Grown by Metalorganic Chemical-Vapor-Deposition

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Dynamics of Below-Band-Gap Carrier in Highly Excited GaN

Ultrafast Carrier Dynamics in Ap-Type GaN Wafer under Different Carrier Distributions

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

Study on Two-Photon Induced Ultrafast Carrier Dynamcis in Ge-doped GaN by Transient Absorption Spectroscopy

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers