Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Shixiong Zhang,Ning Tang,Xiaoyue Zhang,Xingchen Liu,Lei Fu,Yunfan Zhang,Teng Fan,Zhenhao Sun,Fentao Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1016/j.fmre.2021.09.017

2021-01-01

Fundamental Research

Abstract:Spin relaxation induced by the interfacial effects in GaN/Al0.25Ga0.75N heterostructures was carefully investigated using a photon-energy-dependent time-resolved Kerr rotation spectrum. The existence of the interfacial localized states with potential fluctuations at the GaN/AlGaN heterointerface leads to photoluminescence peaks showing blue and S-shaped shifts owing to the excitation power and temperature, respectively. Photoexcited electrons in the localized states show a spin relaxation time longer than 1 ns because of the suppression of the D'yakonov–Perel’ (DP) scattering, while the spin relaxation time of free electrons was approximately only 10 ps because of the giant Rashba spin-orbit coupling induced by the interfacial polarization field under the framework of the DP scattering mechanism. Furthermore, it is found that the high electron mobility at the heterointerface results in a long spin diffusion length of 300 nm at high temperatures, which is promising for the development of GaN-based spintronic devices.