Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Excitonic Effects on Electron Spin Orientation and Relaxation in Wurtzite GaN

Spin dynamics in (111) GaAs/AlGaAs undoped asymmetric quantum wells

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Electron Spin Relaxation in Cubic Gan Quantum Dots: Perturbation Theory and Exact Diagonalization Study

Spin-polarization Dependent Carrier Recombination Dynamics and Spin Relaxation Mechanism in Asymmetrically Doped (110) N-Gaas Quantum Wells

Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells

Spin Relaxation in N-Type (111) GaAs Quantum Wells

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Spin dynamics of electrons in the first excited subband of a high-mobility low-density 2D electron system

Growth Direction Dependence Of The Electron Spin Dynamics In {111} Gaas Quantum Wells

Hole Spin Relaxation in P-Type (111) Gaas Quantum Wells

Localized and Free Exciton Spin Relaxation Dynamics in GaInNAs∕GaAs Quantum Well

Spin Relaxation In N-Type Gaas Quantum Wells With Transient Spin Grating

Observation Of The In-Plane Spin-Dephasing Anisotropy In [111]-Grown Gaas/Algaas Quantum Well

Spin Relaxation Due to Random Rashba Spin-Orbit Coupling in GaAs (110) Quantum Wells

Spin Relaxation Dynamics of Holes in Intrinsic GaAs Quantum Wells Studied by Transient Circular Dichromatic Absorption Spectroscopy at Room Temperature

Electron Spin Coherence and Effect of Spin Polarization on Electron Relaxation Dynamics in Gaas

Tailoring multilayer quantum wells for spin devices