Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

G. Moody,M. E. Siemens,A. D. Bristow,X. Dai,A. S. Bracker,D. Gammon,S. T. Cundiff
DOI: https://doi.org/10.1103/physrevb.83.245316
2011-01-01
Abstract:Exciton inter-and intra-actions in a GaAs/AlGaAs quantum well (QW) and quantum dot (QD) ensemble are studied using optical two-dimensional Fourier transform spectroscopy. We measure population dynamics for times up to 300 ps and temperatures up to 50 K and observe biexponential decay for both QW and QD excitons, strong QW -> QD relaxation, and weak QD -> QW activation. The population dynamics are modeled using a system of rate equations that incorporate radiative and nonradiative decay, coupling between bright and dark exciton states, and QW <-> QD coupling. The fast decay rates are attributed to exciton-bound hole spin flips between optically active and inactive states and are similar for the QW and QDs, indicating excitons are weakly localized in the QDs. The QW -> QD relaxation rate increases with temperature, and QD -> QW excitation is observed at temperatures >= 35 K.
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