Abstract:Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

Dynamics of excitons in individual InAs quantum dots revealed in four-wave mixing spectroscopy

Dynamic Vibronic Coupling in InGaAs Quantum Dots [Invited]

Tuning Quantum Dot States with Optical Fields

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Investigations of a coherently driven semiconductor optical cavity QED system

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Raman Coherence Beats from Entangled Polarization Eigenstates in InAs Quantum Dots

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells

Nonlinear optical response and exciton dephasing in quantum dots

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Dissipative preparation of the exciton and biexciton in a self-assembled quantum dot on picosecond timescales

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Selection rules for the excitation of quantum dots by spatially structured light beams -- Application to the reconstruction of higher excited exciton wave functions

Coherent Optical Processes Of Semiconductors Studied Via Two-Dimensional Fourier Transform Spectroscopy

Dynamics of a mesoscopic nuclear spin ensemble interacting with an optically driven electron spin

InAs/GaAs (211)B quantum dots with negligible FSS for the generation of entangled photons

Influence of local fields on the dynamics of four-wave mixing signals from 2D semiconductor systems

Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function

Resonance fluorescence spectral dynamics of an acoustically modulated quantum dot