Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects

S. Doehrmann,D. Haegele,J. Rudolph,D. Schuh,M. Bichler,M. Oestreich

DOI: https://doi.org/10.1103/PhysRevLett.93.147405

2004-04-28

Abstract:A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along (110). The spin lifetimes of both spin orientations decrease monotonically above a temperature of 80 and 120 K, respectively. The decrease is very surprising for spins along (110) direction and cannot be explained by the usual Dyakonov Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is the strong anisotropy phenomenon of electron spin decoherence in GaAs quantum wells (QWs) growing in specific directions. Specifically, the research focuses on the following points:

1. **Time Difference in Spin Decoherence**:
- In GaAs quantum wells growing in the (110) direction, the spin lifetime along the growth direction (z - direction) is one order of magnitude longer than that in the in - plane (x or y - direction).
- For example, when the temperature exceeds 80 K and 120 K, the lifetimes of both spin directions decrease monotonically. In particular, for the spin along the (110) direction, this decrease is very significant and cannot be explained by the traditional Dyakonov - Perel (DP) decoherence mechanism.

2. **New Spin Decoherence Mechanism**:
- The paper proposes a new spin decoherence mechanism based on the scattering of electrons between different quantum well sub - bands. This mechanism can explain the decrease in spin lifetime at high temperatures, especially in samples growing in the (110) direction.
- Specifically, by considering the influence of spin - orbit coupling \( H_{\text{spin}} \) and inter - sub - band scattering, the paper proposes a theoretical model to explain this phenomenon. The formula is as follows:
\[
H_{\text{spin}}=\frac{1}{2\hbar}[\sigma_x\Omega_x+\sigma_y\Omega_y+\sigma_z\Omega_z]
\]
where,
\[
(\Omega_x,\Omega_y,\Omega_z)=\frac{\Gamma}{\hbar}\left(-k_x^2k_z - 2k_y^2k_z + k_z^3,4k_xk_yk_z,k_x^3 - 2k_xk_y^2 - k_xk_z^2\right)
\]

3. **Experimental Verification**:
- Researchers observed strong spin decoherence anisotropy through time - resolved photoluminescence (PL) measurements and verified the newly proposed spin decoherence mechanism.
- The experimental results show that under a low magnetic field (<0.1 T), the spin oscillation frequency is significantly reduced or even completely suppressed due to the influence of anisotropic decoherence.

In summary, this paper aims to reveal and explain the strong spin decoherence anisotropy phenomenon observed in GaAs quantum wells growing in the (110) direction and proposes a new spin decoherence mechanism based on inter - sub - band scattering. This not only helps to understand the basic physical problems in spintronics but also has important significance for designing high - performance spintronic devices.