Abstract:Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap materials, such as GaN and SiC. Alloying of Al with \b{eta}-Ga2O3 could enable even larger band gap materials, and provide more flexibility for electronic and optoelectronic device design. In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the \b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas oscillation was observed for the first time in the modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by a weak temperature-dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstrated modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena as well as new semiconductor device technologies based on the \b{eta}-Ga2O3 material system.

Shubnikov-de Haas oscillations in 2D electron gas with anisotropic mobility

Quantum Hall-Effect Of Two-Dimensional Electron-Gas In Alyga1-Yas Ga1-Xinxas Gaas Pseudomorphic Structures

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Abnormal Shubnikov-De Haas Oscillations of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures in Tilted Magnetic Fields

Observation of a two-dimensional spin-lattice in non-magnetic semiconductor heterostructures

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Shubnikov-de Haas and de Haas-van Alphen oscillations in Czochralski grown CoSi single crystal

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Ultraclean two-dimensional hole systems with mobilities exceeding 10$^7$ cm$^2$/Vs

Detection of Large Magnetoanisotropy of Electron Spin Dephasing in A High-Mobility Two-Dimensional Electron System in A [001] Gaas/Alxga1-Xas Quantum Well