Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Quantum Hall-Effect Of Two-Dimensional Electron-Gas In Alyga1-Yas Ga1-Xinxas Gaas Pseudomorphic Structures

Quantum Anomalous/valley Hall Effect and Tunable Quantum State in Hydrogenated Arsenene Decorated with a Transition Metal

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Shubnikov-de Haas oscillations in 2D electron gas with anisotropic mobility

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Quantum Anomalous Hall Effect In Magnetically Doped Inas/Gasb Quantum Wells

Abnormal Shubnikov-De Haas Oscillations of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures in Tilted Magnetic Fields

Magnetointersubband Oscillations Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov de Haas oscillations