Spin States in InAs/AlSb/GaSb Semiconductor Quantum Wells

Jun Li,Wen Yang,Kai Chang
DOI: https://doi.org/10.1103/physrevb.80.035303
2009-01-01
Abstract:We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gapquantum wells by solving the Kane model and the Poisson equationself-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quitedifferent from those obtained by the single-band Rashba model due to theelectron-hole hybridization. The Rashba spin-splitting of the lowest conductionsubband shows an oscillating behavior. The D'yakonov-Perel' spin relaxationtime shows several peaks with increasing the Fermi wavevector. By inserting anAlSb barrier between the InAs and GaSb layers, the hybridization can be greatlyreduced. Consequently, the spin orientation, the spin splitting, and theD'yakonov-Perel' spin relaxation time can be tuned significantly by changingthe thickness of the AlSb barrier.
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