Abstract:In this paper, the ultrafast dynamics of spin relaxation and recombination of photoexcited carriers has been studied in (001) GaAs quantum wells using a time-resolved pump-probe absorption spectroscopy under a nearly resonant excitation of heavy-hole excitons. It is found that the spin polarization of carriers influences both absorption saturation of linear polarized light and recombination dynamics of carriers. Pump fluence dependence of the ultrafast dynamics of spin relaxation and recombination of carriers is further studied, which shows that the effect of spin polarization on linearly polarized absorption saturation is reduced with lowering pump fluence. Spin-polarization-dependent absorption saturation effect can be ignored only as the pump fluence is weak. However, spin-polarization dependence of recombination dynamics is presented in turn at low pump fluence. Our analysis shows that such dependence originates from the spin-polarization dependence of the density of excitons formed in the excited carriers because recombination time constants of excitons and free carriers are very different so that the ratio of exciton density to free carrier density can influence the recombination dynamics. The spin-polarization dependence of ultrafast recombination dynamics of photoexcited carriers implies that the recombination time constant in the calculation of spin relaxation time from spin relaxation dynamics should be the recombination time of spin-polarized carriers, rather than the recombination lifetime of non-spin-polarized carriers as done currently. Exciton density is estimated based on 2D mass action law, which agrees very well with our experimental results. The good agreement between theoretical calculation and experimental results reveals that the effect of Coulomb screening on the formation of excitons may be ignored for a lower excited carrier density.

Electron Spin Coherence and Effect of Spin Polarization on Electron Relaxation Dynamics in Gaas

Effects of Spin Polarization on Absorption Saturation and Recombination Dynamics of Carriers in (001) Gaas Quantum Wells

Picosecond Spin Relaxation in Low-Temperature-Grown Gaas

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Electron Spin Dephasing And Optical Pumping Of Nuclear Spins In Gan

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Excitonic Effects on Electron Spin Orientation and Relaxation in Wurtzite GaN

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Ultrafast mapping of optical polarization states onto spin coherence of localized electrons in a semiconductor

Quasi-equilibrium optical nonlinearities in spin-polarized GaAs

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Electron Spin Relaxation under Drift in GaAs

Measurement of electron spin relaxation in charged GaAs quantum dots: Application of nonlinear optical phase-modulation spectroscopy

Spin dynamics of electrons in the first excited subband of a high-mobility low-density 2D electron system

Electron spin relaxation as evidence of excitons in an electron-hole plasma

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Spin Relaxation in Charged Quantum Dots Measured by Coherent Optical Phase Modulation Spectroscopy

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Doppler velocimetry of spin propagation in a two-dimensional electron gas

Polarization Measurement of Spin-Polarized Electrons by Optical Electron Polarimeter

Stimulated and Spontaneous Optical Generation of Electron Spin Coherence in Charged GaAs Quantum Dots