GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

XingXing Fu,Bei Zhang,XiangNing Kang,JunJing Deng,Chang Xiong,Tao Dai,XianZhe Jiang,TongJun Yu,ZhiZhong Chen,Guo Yi Zhang

DOI: https://doi.org/10.1364/OE.19.0A1104

IF: 3.8

2011-01-01

Optics Express

Abstract:In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED. (C) 2011 Optical Society of America