Abstract:The two-dimensional (2D) Ga-nitride/air photonic quasi-crystals (PQC) were successfully fabricated by the technique of focused Ga ion beam (FIB) milling on GaN based epitaxial wafers The effects of the PQC on the current injected edge emitting GaN-based light emitters were investigated. The quasi-crystal structures studied in this work are based on square-triangular tiling with 8-fold or 12-fold symmetry. The air hole diameter in the different PQC patterns was varied from 95nm up to 1200nm, the filling factor of air hole was in the range of 10% to 50% and the depth of the hole was 90nm to 370nm, respectively. Among these, the nearest center-to-center distance of the holes and/or the lattice constant was reached to be 170nm. The photonic quasi-crystals on the GaN-based light emitters demonstrated a two to three factor of magnitude enhancement of surface extractive emission. The blocking of the propagation of planar-guided modes by the photonic quasi-crystals was observed. By comparison of symmetry effect among the triangular lattice PC and PQCs, it was found that the GaN-based photonic quasi-crystal (PQC) with 12-fold symmetry provided a much favorable enhancement of the extractive light emission over that of triangle lattice PC and 8-fold symmetric PQC as well.

Two-Dimensional Photonic Quasicrystal on the Surface of Gan-Based Light Emitting Diodes

Surface Light Extraction Mapping from Two-Dimensional Array of 12-Fold Photonic Quasicrystal on Current Injected Gan-Based Leds

The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on Gan-Based Light Emitters

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Surface Plasmon-Enhanced Micro-Cylinder Mode in Photonic Quasi-Crystal.

Fabrication and Application of Gallium Nitride-Based Two-Dimensional Octagonal Photonic Quasicrystals

Micro-Cylinder Mode in Photonic Quasicrystal Observed by Near-Field Optical Microscopy

Spatial Mapping on Surface Light Extraction from 2D Photonic Quasicrystals Patterned GaN‐based Light Emitters

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Lattice Constant Effects of Photonic Crystals on the Extraction of Guided Mode of GaN Based Light Emitting Diodes

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Light Emission Of 2d Photonic Crystal Based On Nanocrystal-Si/Sio(2) Superlattice Structure

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Large-Scale Sio2 Photonic Crystal for High Efficiency Gan Leds by Nanospherical-Lens Lithography

Enhanced External Quantum Efficiency of Light Emitting Diodes by Fabricating Two-Dimensional Photonic Crystal Sapphire Substrate with Holographic Technique

A Study of LED with Surface Photonic Crystal Structure Fabricated by the Nanoimprint Lithography

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Liquid Exfoliation of Decagonal Quasicrystals and Its Light Out‐Coupling Performance in Organic Light‐Emitting Devices

Theoretical Analysis of Enhanced Light Output from a GaN Light Emitting Diode with an Embedded Photonic Crystal

Diffracted Transmission Effects of GaN and Polymer Two-Dimensional Square-Lattice Photonic Crystals.

Enhanced Optical Power of GaN-based Light-Emitting Diode with Compound Photonic Crystals by Multiple-Exposure Nanosphere-Lens Lithography