Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

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Two-Dimensional Photonic Quasicrystal on the Surface of Gan-Based Light Emitting Diodes

Surface Light Extraction Mapping from Two-Dimensional Array of 12-Fold Photonic Quasicrystal on Current Injected Gan-Based Leds

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Micro-Cylinder Mode in Photonic Quasicrystal Observed by Near-Field Optical Microscopy

Surface Plasmon-Enhanced Micro-Cylinder Mode in Photonic Quasi-Crystal.

Spatial Mapping on Surface Light Extraction from 2D Photonic Quasicrystals Patterned GaN‐based Light Emitters

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

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Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

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Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Lattice Constant Effects of Photonic Crystals on the Extraction of Guided Mode of GaN Based Light Emitting Diodes

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Nonperiodic Binary Optical Structures for Enhancing Light Extraction of Emitters