Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

Micro-Cylinder Mode in Photonic Quasicrystal Observed by Near-Field Optical Microscopy

Surface Plasmon-Enhanced Micro-Cylinder Mode in Photonic Quasi-Crystal.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Surface Light Extraction Mapping from Two-Dimensional Array of 12-Fold Photonic Quasicrystal on Current Injected Gan-Based Leds

Fabrication and Application of Gallium Nitride-Based Two-Dimensional Octagonal Photonic Quasicrystals

Two-Dimensional Photonic Quasicrystal on the Surface of Gan-Based Light Emitting Diodes

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on Gan-Based Light Emitters

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Spatial Mapping on Surface Light Extraction from 2D Photonic Quasicrystals Patterned GaN‐based Light Emitters

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Unique Enhancement of the Whispering Gallery Mode in Hexagonal Microdisk Resonator Array with Embedded Ge Quantum Dots on Si

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Single-Mode Emission from Ge Quantum Dots in Photonic Crystal Nanobeam Cavity

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Photoluminescence from Site-Selected Coupling Between Quantum Dots and Microtoroid Cavities

On-Chip Ultrahigh-Q Microcavities for Highly Unidirectional Emission