Abstract:<p>Gallium nitride (GaN) is a promising semiconductor for the fabrication of a wide range of electronic and optoelectronic devices. For GaN grown on widely used sapphire substrate, bundles of threading dislocations (TDs) are induced by thermal and lattice mismatch. These TDs intersect the surface of GaN and degrade the internal quantum efficiency (IQE) of GaN-based devices. To address this issue, two innovative techniques are proposed for effective filtration of TDs. First, a novel design of serpentine channel pattern sapphire substrate (SCPSS) is applied for effective filtration of TDs at the interface. Transmission electron microscopy (TEM) indicated that SCPSS plays an effective role in the filtration of TDs; however, cathodoluminescence (CL) revealed that many TDs still intersect the surface of GaN. To further optimize the growth of GaN, the temperature was ramped down to the intermediate level and an interlayer (IL) of InGaN was introduced near the window of SCPSS. CL analysis indicated that additional use of InGaN-IL further reduced the TDs. Raman microscopy showed that incorporation of IL lead to drastic reduction in compressive stress. Atomic force microscopy (AFM) confirmed the achievement of excellent surface topography with InGaN-IL. Moreover, it is observed that growth of GaN by SCPSS is better than conventional growth because of improved surface morphology and low TDs. The reduction of TDs by SCPSS and InGaN-IL is an effective approach for the growth of high-quality GaN towards efficient devices.</p>

In Situ Site-Speci fi c Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar ( 11 2̅ 2 ) GaN

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Elimination of basal-plane stacking faults in semipolar/nonpolar GaN and light emitting diodes heteroepitaxially grown on sapphire substrates

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

In situ asymmetric island sidewall growth of high-quality semipolar (11(2)over-bar2) GaN on m-plane sapphire

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (11(2)over-bar2) GaN templates and their correlations

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

In Situ Pendeoepitaxy of GaN Using Heteroepitaxial AlGaN∕GaN Cracks

Effects of InGaN-interlayer on Closed Stripes of GaN Grown by Serpentine Channel Patterned Sapphire Substrate

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Identification And Elimination Of Inductively Coupled Plasma-Induced Defects In Alxga1-Xn/Gan Heterostructures

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors