Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Zhenchuan Yang,Jun-Yong Lu,G.Z. Yan,Jingfang Chen
2011-01-01
Nanotechnology and Precision Engineering
Abstract:Besides the success in optoelectronic devices and high frequency power transistors , gallium ni- tride ( GaN ) is drawing intensive attentions for its application in MEMS devices recently , owing to the material's superior mechanical , thermal and chemical stability and bio-compatibility. The effective means to pattern and release the GaN-based MEMS structures are of particular technological importance. In this paper , GaN-based MEMS microstructures were obtained on the ( 111 ) silicon substrate using a dry-etch- only fabrication technique. Various suspended GaN microstructures were fabricated by the proposed fabri- cation process and characterized through scanning electron microscope ( SEM ) and optical micro-profiler. To characterize the residual stress distribution of the fabricated microstructures , micro-Raman spectrosco-
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