Fabricating Processes Of Free-Standing Silicon Nitride Thin Film For Mems Devices

Shuai Shi,Xuefang Wang,Chunlin Xu,Jiaojiao Yuan,Jing Fang,Shengwei Jiang,Sheng Liu
DOI: https://doi.org/10.1109/ICEPT.2013.6756412
2013-01-01
Abstract:In this paper, experiments were carried out to fabricate a kind of free-standing silicon nitride thin film which was applied to many MEMS devices, especially for the gas flow sensors and Pirani. A series of manufacturing processes were researched and optimized to obtain perfect experimental results. LPCVD silicon nitride, dry etching silicon nitride and wet etching silicon were carefully studied in the experiments. 1 um thick SiN layer was deposited on the double-sides polished silicon wafer. ICP was employed to obtain the corrosion windows. Results showed that etching rates of the SiN and Si are 0.17 um/min and 1.18 um/min respectively. Wet etching process with the conditions of 30% KOH solution at 85 degrees C was applied to release the SiN films from the substrate. Wet etching rate was about 0.817 um/min. The chromium (50nm) and platinum (200nm) layers were sputtered onto the SiN layer which acted as resistances in the test circuits. Finally, many ideal metallized free-standing silicon nitride films were fabricated on the single wafer surface. Without doubt, it may have a long-term positive impact on MEMS development and applications.
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