Abstract:Mechanical characterization is vital for the design of MEMS/NEMS. Many methods have been developed to measure the mechanical properties of materials; however, most of them are either too complicated, or expensive for industrial application, or not accurate. This paper describes a new characterization method to extract the mechanical properties of the materials that is simple, inexpensive and applicable to a wide range of materials. The beams of the material under tests, are patterned by laser micromachining and released by KOH etch. Surface profilometer is used to scan along mu-machined cantilevers and produce a bending profile, from which the Young's modulus can be extracted. The errors due to initial curling and anticlastic (width) effect have been carefully studied. A new ANSYS FEA model is developed to evaluate the effects and test structure designs. SiNx, Ni, SiC and nanocrystal diamond cantilevers have been fabricated and their mechanical properties, e.g. Young's modulus have been evaluated as 154 +/- 12GPa, 202 +/- 16GPa, 360 +/- 50GPa and 504 +/- 50GPa, respectively. These results are consistent with those measured by nano-indentation. Residual stress gradient has also been extracted by surface profilometer, which is comparable with the results inferred from Zygo interferometer measurements. It is also possible to extract plate modulus and Poisson ratio with minimal error achieved. This method can be extended to AFM or nanometer-stylus profilometer for NEMS mechanical characterization.

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Characterization of Gan Cantilevers Fabricated with Gan-On-Silicon Platform

Study of GaN Epilayers Growth on Freestanding Si Cantilevers

Design and Testing on High Sensitive Micro-accelerometer Based on HEMT

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

GaN on Patterned Silicon (GPS) Technique for GaN-based Integrated Microsensors

Mechanical characterization of biocompatible thin film materials by scanning along micro-machined cantilevers for micro-/nano-system

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Mems/Nems Mechanical Characterization on Different Thin - Film Materials by Scanning along Micro-Machined Cantilevers

Fabrication and Characterization of AlN-based, CMOS compatible Piezo-MEMS Devices

Fabrication And Characterization Of V-Gate Algan/Gan High-Electron-Mobility Transistors

Fabrication and Characterization of Piezoelectric Cantilever for Micro Transducers

Research on AlN thin film microstructure processing technology based on ultra-thin cantilever beam structure

Micro-mechanical Characterisation for MEMS Thin Films by Bending Μ-Machined Cantilevers