Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 mu m GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN( 002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I-dss of 737mA/mm, peak transconductance G(m) of 185 mS/mm, drain leakage current density I-ds of 1.7 mu A/mm, gate leakage current density I-gs of 24.8 mu A/mm and off-state breakdown voltage V-BR of 67V are achieved with L-g/W-g/L-gs/L-gd = 1/10/1/1 mu m. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f(T) of 8.3 GHz and power gain cutoff frequency f(max) of 19.9 GHz are achieved with L-g/W-g/L-gs/L-gd = 1/100/1/1 mu m. Furthermore, the best rf performance with f(T) of 14.5 GHz and f(max) of 37.3 GHz is achieved with a reduced gate length of 0.7 mu m.

Characterization of Gan Cantilevers Fabricated with Gan-On-Silicon Platform

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Design and Testing on High Sensitive Micro-accelerometer Based on HEMT

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

GaN on Patterned Silicon (GPS) Technique for GaN-based Integrated Microsensors

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Growth and Characterization of Algan/Aln/Gan/Algan Double Heterojunction Structures with Algan As Buffer Layers

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts