Abstract:Strain engineering has proven to be a useful technique for enhancing the performance of many modern-day transistors. Stress engineering can also have a non-trivial effect on the performance of GaN HEMTs, which are devices of choice for high-power, high-frequency microwave applications. Process-induced stress can have a significant effect on AlGaN/GaN HEMT electrical characteristics in addition to the growth-induced strain present due to lattice constant mismatch between device layers. Understanding the true impact of process-induced strain on AlGaN/GaN HEMT microwave performance is highly necessary. This is especially the case for nonlinearity effects which affect the high-frequency performance of the device. To the best of our knowledge, there is no systematic report on the effect of nitride passivation-induced stress on AlGaN/GaN HEMT device linearity. This work uses a systematic combination of TCAD process simulation and device simulation to quantify the effect of process-induced stress on the device's linearity. This work demonstrates that nonlinearity effects can be minimized through proper tuning of stress by varying design-dependent parameters such as the nitride layer thickness. The effect of stress on highly important linearity parameters of the device like gm, gm2, gm3, VIP2, VIP3, IIP3 and IMD3 is investigated in detail. Comparing the compressive-stress device to the no-stress and tensile-stress devices, we conclude that the compressive stress device has a max gm2 value that is 61% and 71% higher respectively. The max gm3 for compressive stress is 0.13 A/V3 whereas those for no-stress and tensile stress are 0.067 A/V3 and 0.045A/V3 respectively. However, the voltage-variations of VIP2 and the VIP3 parameters which are derived from these gm values shows that the compressive stress case can help achieve overall better device linearity by stress tuning. This work also studies how the effect of process-induced stress on device linearity varies with the crucial gate length parameter.

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

Stress Reliability Study of GaN HEMT Devices

Process-Induced Stress Tuning to Improve Linearity Performance in AlGaN/GaN HEMTs with SiNx Passivation

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Structural and Electrical Characteristics of GaN HEMTs with in Situ SiN X Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Enhanced Device Performance of GaN High Electron Mobility Transistors with in Situ Crystalline SiN Cap Layer

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs