Abstract:This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device's leakage current, with the gate leakage current (Ig) increasing by ~107 times and the drain-to-source leakage current (Idss) increasing by ~106 times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device's transfer characteristic and on-resistance (Ron) but far less influence on Ig and Idss. As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of single stress and electro - thermo - mechanical coupling stress on the electrical performance of top - cooled enhancement - mode (E - mode) AlGaN/GaN high - electron - mobility transistors (HEMTs). Specifically, the author focuses on the influence mechanisms of different types of stress (such as planar pressure, linear deformation, point - like deformation, ambient temperature, electro - thermal coupling, thermo - mechanical coupling, and electro - thermo - mechanical coupling stress) on the electrical characteristics of GS66508T - type AlGaN/GaN HEMT devices. It is found that different stress types have different influence mechanisms on the device. In particular, excessive mechanical pressure/deformation stress will cause the drain current of the device to degrade severely and irreversibly. In addition, the ambient thermal stress has a greater influence on the transfer characteristics and on - resistance (\(R_{on}\)) of the device, but has a smaller influence on the gate leakage current (\(I_g\)) and the drain - source leakage current (\(I_{dss}\)). Under the action of multi - stress coupling, the failure of the device is more obvious. To explore this problem more in - depth, the COMSOL software was also used in the study for finite - element simulation analysis to evaluate the influence of electro - thermo - mechanical coupling stress on top - cooled E - mode AlGaN/GaN HEMT. The experimental and simulation results show that whether it is single stress or coupling stress, especially the coupling of mechanical stress with other stresses, it will lead to the degradation of the electrical performance of top - cooled E - mode AlGaN/GaN HEMT, and even cause irreversible damage. Therefore, when designing, transporting, storing and applying top - cooled E - mode AlGaN/GaN HEMT, the influence of mechanical stress should be reduced as much as possible.

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