Abstract:In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted. It is found that the time-dependent gate degradation exhibits weak relevance with frequencies ranging from 10 to 100 kHz under dynamic gate stress and is similar to that in static gate stress. Both the gate breakdown voltage (BV) and mean-time-to-failure (MTTF) show positive temperature dependence. Moreover, the current–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V</italic> ) characteristics and threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN devices before/after gate degradation are compared and analyzed. The degraded Schottky junction exhibits an ohmic-like gate behavior. It is revealed that under a large gate bias stress, high-energy electrons accelerated in the depletion region of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer would promote the formation of defect levels near the metal/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN interface, leading to the initial <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer degradation. The subsequent high gate leakage density could cause the final degradation of the AlGaN barrier.

DEGRADATION OF LOW-FREQUENCY NOISE IN AlGaN/GaN HEMTS DUE TO HOT-ELECTRON STRESSING

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

1/F Noise in GaN/AlGaN HEMTs

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN Gate HEMTs

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature