Abstract:Context: The aim of this work is to use first principles calculations to examine the effects of different mechanical strains on the optoelectronic and photocatalytic capabilities of the 2D/2D nanoheterostructure of AlN/GaN. By utilizing the lmBJ (Meta-GGA) and PBEsol (GGA) functional, the bandgap of the nanoheterostructure is calculated and found to be 4.89 eV and 3.24 eV. Simulated 2D AlN/GaN nanoheterostructure exhibits exceptional optical and electronic characteristics under applied biaxial tensile and compressive strains. The band gap changes from 4.89 to 3.77 eV, while the energy gap nature transitions from direct to indirect during tensile strain fluctuations of 0% to 8%. Strain is also found to have a significant effect on the optical absorption peaks. And a 0-8% rise in tensile strain causes the initial absorption peak of the 2D AlN/GaN nanoheterostructure to shift from 4.88 to 4.20 eV, which results in a 14% red shift in photon energy for every 2% change in strain. Furthermore, the optimum bandgap and band edge positions of the 2D AlN/GaN nanoheterostructure enable the water redox process to produce hydrogen and oxygen for wide range of pH. Thus, modification via strain may be an effective method for altering the optical as well as electronic characteristics of a 2D AlN/GaN nanoheterostructure, and this study may pave the way for new applications of this material in optoelectronic devices in the future. Methods: In the current work, density functional theory is used to explore every attribute of the 2D AlN/GaN nanoheterostructure. To characterize the electronic exchange-correlation, we used the PBEsol functional. In order to prevent any interlayer contact between periodicity of images, a vacuum is produced along the z-direction of approximately 10 Å. To increase the precision of bandgap prediction, the electronic and optical characteristics were computed using the meta-GGA lmBJ functional. To account for interlayer van der Waals interactions, nanoheterostructure computations were performed using the DFT-D3 functional.

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Effect of strain on the effective mass of GaN and the mobility of AlGaN/GaN two-dimensional electron gas

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Effects of Uniaxial Strain on Electron Effective Mass and Tunneling Capability of Direct Gap Ge1−xSnx Alloys

Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Mechanical strain effect on the optoelectronic properties and photocatalysis applications of layered AlN/GaN nanoheterostructure

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Mechanical Manipulations on Electronic Transport of Graphene Nanoribbons

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer