Abstract:The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps Nit and slow oxide border traps NSOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density ΔDSOXAcceptor(E) is mainly distributed above the conduction band edge Ec of InGaAs with a tail extending to the midgap, whereas donor trap energy density ΔDSOXDonor(E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Stress Reliability Study of GaN HEMT Devices

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress