Abstract:The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps Nit and slow oxide border traps NSOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density ΔDSOXAcceptor(E) is mainly distributed above the conduction band edge Ec of InGaAs with a tail extending to the midgap, whereas donor trap energy density ΔDSOXDonor(E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Experimental Investigation on the Instability for NiO/β-Ga2O3 Heterojunction-Gate FETs under Negative Bias Stress

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

The Mechanism of Degradation and Failure in NiO/ Β -Ga2o3 Heterojunction Diodes Induced by the High-Energy Ion Irradiation

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Current Transport Dynamics and Stability Characteristics of the NiO X Based Gate Structure for Normally-off GaN HEMTs

Degradation of β-Ga 2 O 3 Vertical Ni/Au Schottky Diodes Under Forward Bias

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Majority and Minority Carrier Traps in NiO/β-Ga2O3 P+-N Heterojunction Diode

Traps Inhomogeneity Induced Conversion of Shockley–Read–Hall Recombination in NiO/β-Ga2O3 P+–n Heterojunction Diodes

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric