Abstract:GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

The Mechanism of Degradation and Failure in NiO/ Β -Ga2o3 Heterojunction Diodes Induced by the High-Energy Ion Irradiation

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

2.6 Kv NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability

Performance Enhancement of NiOx/β-Ga2O3 Heterojunction Diodes by Synergistic Interface Engineering

Performance Enhancement of NiO $_{\textit{x}}$ / $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Heterojunction Diodes by Synergistic Interface Engineering

Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates

3.3 kV-class NiO/ β -Ga2O3 heterojunction diode and its off-state leakage mechanism

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Effect of Electron Irradiation and Defect Analysis of Β-Ga2o3 Schottky Barrier Diodes

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

Defect Identification in Β-Ga2o3 Schottky Barrier Diodes with Electron Radiation and Annealing Regulating