Abstract:In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the pn diode without annealing (PND) and with annealing (APND) are studied systematically. The APND device has a lower specific on-resistance of 4.1 mΩ cm2, compared to that of the PND, 5.4 mΩ cm2. Moreover, for the APND, a high breakdown voltage of 1630 V with lower leakage current is achieved, which is 730 V higher than that of the PND. The enhanced electrical performance of the APND leads to a record high power figure of merit of 0.65 GW/cm2 in Ga2O3-based pn diodes, which is among the best reported results in Ga2O3 power devices. In addition, the interface trap density of the diode decreases from 1.04 × 1012 to 1.33 × 1011 eV−1 cm−2 after annealing, contributing to much lower hysteresis. Simultaneously, the ideality factor <math> n</math> for the APND is steady at elevated temperatures due to the stable interface. The results of <math> C − V</math> characteristics reveal the bulk defects inside the nickel oxide film grown by sputtering, which are calculated by high- and low-frequency capacitance methods. X-ray photoelectron spectroscopy of NiO illustrates the reasons for the changes in the concentration of holes and defects in the film before and after annealing. This work paves the way for further improving the performance of Ga2O3 diode via interface engineering.

Degradation of β-Ga 2 O 3 Vertical Ni/Au Schottky Diodes Under Forward Bias

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

The Mechanism of Degradation and Failure in NiO/ Β -Ga2o3 Heterojunction Diodes Induced by the High-Energy Ion Irradiation

Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO2 Passivation Layer Under On-State Stress Bias

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Effect of post anode annealing on W/Au and Ni/Au multi-channel AlGaN/GaN Schottky diode

Defect Identification in Β-Ga2o3 Schottky Barrier Diodes with Electron Radiation and Annealing Regulating

I - V Characteristics of Au∕Ni Schottky Diodes on GaN with SiNx Nanonetwork

Ni/Au Schottky Diodes on Alxga1-Xn (0.7 < X < 1) Grown on Aln Single Crystal Substrates

Film thickness degradation of Au/GaN Schottky contact characteristics

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga2O3 Schottky diodes

The Role of Line-Shaped Defects in Premature Breakdown of $\Beta-\Text{ga}_{2}\mathrm{o}_{3}$ Power Diode and Suppression by Oxygen Annealing

Investigation of Temperature Dependent Electrical Characteristics on Au/Ni/β-Ga 2 O 3 Schottky Diodes

Low defect density and small I − V curve hysteresis in NiO/ β -Ga 2 O 3 pn diode with a high PFOM of 0.65 GW/cm 2

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Low Defect Density and Small I−V Curve Hysteresis in NiO/ Β -Ga2o3 Pn Diode with a High PFOM of 0.65 GW/cm2

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination