Abstract:The Pt/Au Schottky contacts to InGaN samples with different background carrier concentrations are fabricated. The crystal qualities of InGaN samples are characterized by X-ray diffraction (XRD) and atomic force microscope (AFM), and the correlation between threading dislocation density of InGaN and growth temperature is further clarified. The full width at half maximum (FWHM) values of the InGaN (0002) XRD rocking curves show that the density of threading dislocations in InGaN, which can seriously deteriorate InGaN crystal quality and surface morphology, decreases rapidly with increasing growth temperature. The Hall measurements show that the background carrier concentration of InGaN increases by two orders of magnitude as growth temperature decreases from 750 to 700℃, which is due to a reduced ammonia decomposition efficiency leading to the presence of high-density donor-type nitrogen vacancy (VN) defects at lower temperature. Therefore, combining the studies of XRD, AFM and Hall, it can be concluded that the higher growth temperature is favorable for realizing the InGaN film with low density of VN defects and threading dislocations for fabricating high-quality Schottky contacts, and then the barrier characteristics and current transport mechanism of Pt/Au/n-InGaN Schottky contact are investigated by current-voltage measurements and theory analysis based on the thermionic emission (TE) model and thermionic field emission (TFE) model. The results show that Schottky characteristics for InGaN with different carrier concentrations manifest obvious differences. It is noted that the high carrier concentration leads to the Schottky barrier height and the ideality factor obtained by TE model are quite different from that by TFE model due to the presence of high density of VN defects. This discrepancy suggests that the VN defects lead to the formation of the tunneling current and further reduced Schottky barrier height. Consequently, the presence of tunneling current results in the increasing of total transport current, which means that the defects-assisted tunneling transport and TE constitute the current transport mechanism in the Schottky. However, the fitted results obtained by TE and TFE models are almost identical for the InGaN with lower carrier concentration, indicating that TE is the dominant current transport mechanism. The above studies prove that the Pt/Au/n-InGaN Schottky contact fabricated using low background carrier concentration shows better Schottky characteristics. Thus, the properly designed growth parameters can effectively suppress defects-assisted tunneling transport, which is crucial to fabricating high-quality Schottky devices.

Film thickness degradation of Au/GaN Schottky contact characteristics

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Current Transport Mechanism of Schottky Contact of Pt/Au/n-InGaN

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Current Transport Mechanisms in Pt/Au Schottky Contacts to AlInGaN Using AlGaN/InGaN Short-Period Superlattices

I - V Characteristics of Au∕Ni Schottky Diodes on GaN with SiNx Nanonetwork

The Effect Of Annealing Temperature On Electrical Properties Of Au/N-Gasb Schottky Contacts

Hot Electron Reduction at N‐si/au Thin Film Electrodes

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures

Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In 0.18 Al 0.82 N/GaN heterostructures

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts*

Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force Microscope.

The Annealing Effect Of Schottky Contact On Algan/Gan

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Thermal Stability of Tungsten and Tungsten Nitride Schottky Contacts to AlGaN/GaN