Abstract:In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the pn diode without annealing (PND) and with annealing (APND) are studied systematically. The APND device has a lower specific on-resistance of 4.1 mΩ cm2, compared to that of the PND, 5.4 mΩ cm2. Moreover, for the APND, a high breakdown voltage of 1630 V with lower leakage current is achieved, which is 730 V higher than that of the PND. The enhanced electrical performance of the APND leads to a record high power figure of merit of 0.65 GW/cm2 in Ga2O3-based pn diodes, which is among the best reported results in Ga2O3 power devices. In addition, the interface trap density of the diode decreases from 1.04 × 1012 to 1.33 × 1011 eV−1 cm−2 after annealing, contributing to much lower hysteresis. Simultaneously, the ideality factor <math> n</math> for the APND is steady at elevated temperatures due to the stable interface. The results of <math> C − V</math> characteristics reveal the bulk defects inside the nickel oxide film grown by sputtering, which are calculated by high- and low-frequency capacitance methods. X-ray photoelectron spectroscopy of NiO illustrates the reasons for the changes in the concentration of holes and defects in the film before and after annealing. This work paves the way for further improving the performance of Ga2O3 diode via interface engineering.

Traps Inhomogeneity Induced Conversion of Shockley–Read–Hall Recombination in NiO/β-Ga2O3 P+–n Heterojunction Diodes

Trap-mediated Bipolar Charge Transport in NiO/Ga2O3 P+-N Heterojunction Power Diodes

Majority and Minority Carrier Traps in NiO/β-Ga2O3 P+-N Heterojunction Diode

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Trap States in p-NiO/n-Ga2O3 heterojunctions on Czochralski β-Ga2O3 crystals

Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates

Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

A 1.86-Kv Double-Layered NiO/ Β -Ga2o3 Vertical P–n Heterojunction Diode

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II P-N Heterojunctions

Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

On-state electrical stress-induced degradation of NiO/ β -Ga2O3 heterojunction pn diodes

Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p‐n Diode

Field-Plated NiO/Ga2O3 P-N Heterojunction Power Diodes with High-Temperature Thermal Stability and Near Unity Ideality Factors

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Performance Enhancement of NiOx/β-Ga2O3 Heterojunction Diodes by Synergistic Interface Engineering

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Performance Enhancement of NiO $_{\textit{x}}$ / $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Heterojunction Diodes by Synergistic Interface Engineering

Low Defect Density and Small I−V Curve Hysteresis in NiO/ Β -Ga2o3 Pn Diode with a High PFOM of 0.65 GW/cm2

Low defect density and small I − V curve hysteresis in NiO/ β -Ga 2 O 3 pn diode with a high PFOM of 0.65 GW/cm 2