Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating Up to 200 °C by Electrothermal Aging Technology

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Experimental Investigation on the Instability for NiO/β-Ga2O3 Heterojunction-Gate FETs under Negative Bias Stress

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Experimental Investigation on Threshold Voltage Instability for Β-Ga2o3 MOSFET under Electrical and Thermal Stress

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Improved Electrical and Reliability Characteristics of HfN--HfO/sub 2/-Gated Nmosfet with 0.95-Nm EOT Fabricated Using a Gate-First Process

Scalability And Reliability Of Tan/Hfn/Hfo2 Gate Stacks Fabricated By A High Temperature Process

Normally-off Β-Ga2o3 Power Heterojunction Field-Effect-Transistor Realized by P-Nio and Recessed-Gate

Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Alleviation of Negative-Bias Temperature Instability in Si P-Finfets with ALD W Gate-Filling Metal by Annealing Process Optimization

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs