Abstract:In this work, the device stability of p-GaN gate HEMTs under self-heating effect is comprehensively investigated by the ON-state drain current injection (DCI) technique. By delicately modulating the DCI condition, the devices exhibit different chip temperatures ranging from 40 °C to 150 °C, while the devices show quite distinguishing instability behaviors. Particularly, substantial threshold voltage shift and saturation drain current degradation is constantly observed in the device with severe self-heating effect after DCI stress. Significant ${V}_{\text{th}}$ shift of +0.83 V and saturation current reduction up to 18% are observed after the DCI stress, corresponding to a chip temperature of ~150 °C. After the device degradation, the device characteristics show a recoverable dynamic. By investigating the gate leakage current together with the electrothermal device TCAD simulation, ${V}_{\text{th}}$ instability induced by the self-heating is revealed to be the electron trapping in the p-GaN gate-stack, while the saturation drain current degradation originates from a composited action of thermally enhanced electron trapping/de-trapping in p-GaN gate-stack as well as the access region at the hot spot close to the source field plate. The results reported in this work suggest that self-heating is a critical issue that may cause unstable operation of p-GaN gate HEMTs. The revealed underlying mechanisms are beneficial for further improving device stability.

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size A-Ingazno TFTs

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Investigation of the Anomalous Hump Phenomenon in Amorphous InGaZnO Thin-Film Transistors

Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in A-Ingazno Thin Film Transistors

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique