Abstract:In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²&middot;V&minus;1&middot;s&minus;1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current&ndash;voltage and capacitance&ndash;voltage (C&ndash;V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened.

Investigation of the Anomalous Hump Phenomenon in Amorphous InGaZnO Thin-Film Transistors

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Investigation of an Anomalous Hump in Gate Current after Negative-Bias Temperature-Instability in Hfo2/Metal Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

P‐1.5: High‐Voltage characteristics of Top‐Gate Amorphous InGaZnO Thin‐Film Transistors

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Anomalous Bias-Stress-Induced Unstable Phenomena of Inzno Thin-Film Transistors Using Ta2o5 Gate Dielectric

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

Role of H 2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

H2o Adsorption on Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress