Abstract:The instability of the gate bias and drain bias stresses is observed at high temperature in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The transfer characteristics of a-IGZO TFTs at different temperatures are also investigated in this paper. The transfer curve exhibits an apparent subthreshold current stretchout phenomenon at high temperature. The stretchout phenomenon becomes more serious with the increase of the temperature. In addition, thermally induced holes are accumulated by the negative gate voltage and get trapped in the gate dielectric or at the dielectric/channel interface at high temperature. The negative threshold voltage shifts with stress time and this is because the trapped holes induce more electrons. For drain bias stress at high temperature, the transfer curve exhibits an apparent shift during drain bias stress at high temperature compared with the same at room temperature. At high temperature, thermally induced holes are trapped in the gate insulator, especially near the drain region. Capacitance-voltage measurements have been used to prove the nonuniform hole-trapping phenomenon. Furthermore, the simulation of the capacitance-voltage and current-voltage curves also have been applied to confirm the hole-trapping distribution. The obtained results clarify that the instability is caused by nonuniform hole-trapping phenomenon.

Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Investigation of the Anomalous Hump Phenomenon in Amorphous InGaZnO Thin-Film Transistors

Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Thermal stability of amorphous InGaZnO thin film transistors passivated by AlO x layers

Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in A-Ingazno Thin Film Transistors

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

P‐1.5: High‐Voltage characteristics of Top‐Gate Amorphous InGaZnO Thin‐Film Transistors

Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Film Transistors

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

The clarification of leakage conduction mechanism of HfO2/SiNx stacked a-IGZO TFT and its variation at high temperature

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress