Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Comparison of N-2 and Ar Plasma Treatment for Source/Drain Formation in Self-Aligned Top-Gate Amorphous Ingazno Thin Film Transistor

P-20: Effects of N<sub>2</sub> O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

Sol-gel Indium-Zinc-tin-oxide Thin Film Transistor Pixel Array with Superior Stabilityunder Negative Bias Illumination Stress

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Plasma Influences on the Performance of Ti Protected Back-Channel-Etched A-Igzo TFTs

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer