Abstract:This study investigates the effect of oxygen plasma treatment on the surface morphology, electrical properties, and stability of amorphous graphene quantum dots (GQDs)-modulated InGaZnO (IGZO) thin-film transistors (TFTs) prepared by all-solution method. The weak threshold voltage shifts ( of the oxygen plasma-treated GQDs-IGZO TFTs under positive bias stress (PBS), negative bias stress (NBS), positive bias illumination stress (PBIS), and negative bias illumination stress (NBIS) show a significant improvement of the bias-induced instability. Based on the energy band diagrams, this work demonstrates that O and H2O+ are formed in the back channel under PBS and NBS conditions in addition to ionized oxygen vacancy (V defects at the GQDs–IGZO/ZrOx interface, leading to the gate bias instability, which can be effectively suppressed by the oxygen plasma treatment to improve the stability of the device. From the experimental results, it can be seen that the electrical properties, such as field effect mobility ( , on-/off-current ratio ( / , and subthreshold fluctuations, are significantly improved by the passivation of interfacial trap density and bulk trap defects by oxygen plasma treatment. To confirm the potential applications of IGZO-TFTs in logic circuits, inverter based on GQDs-IGZO/ZrOx has been integrated, demonstrating good dynamic response characteristics and narrow transition width. Low-frequency noise (LFN) analyses of TFTs have revealed that mobility fluctuations are the main source of noise. As a result, it can be concluded that the facile oxygen plasma treatment strategy is a promising technique to optimize device performance and has demonstrated potential applications in preparing GQDs-IGZO TFTs with high performance.

P-20: Effects of N<sub>2</sub> O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors

Comparison of N-2 and Ar Plasma Treatment for Source/Drain Formation in Self-Aligned Top-Gate Amorphous Ingazno Thin Film Transistor

Effects of N2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors

N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Effect of N 2O Treatment on Performance of Back Channel Etched Metal Oxide Thin Film Transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Plasma Influences on the Performance of Ti Protected Back-Channel-Etched A-Igzo TFTs

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOxChannels Via O2Plasma Treatment

N2O-plasma Effect on Low-Temperature Deposited Gate Dielectric for Organic Thin-Film Transistors

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

Enhancement of Electrical Characteristics of SnGaO Thin-Film Transistors Via Argon and Oxygen Plasma Treatment

Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT