Abstract:The effect of O-2 flow rate during the sputtered deposition of channel layer on the negative gate-bias stress (NGBS)-induced threshold voltage (V-th) instability of a-IGZO TFTs is investigated. It is shown that the negative gate-bias stress results in a negative V-th shift of the a-IGZO TFTs, and the shift amount decreases with the increase in O-2 flow rate. It is proposed that the V-th shift originates from the electron-detrapping from the oxygen vacancy-related donor-like states at the channel/dielectric interface. As the O-2 flow rate increases, the density of donor-like states is decreased and the distribution of neutral donor-like states below E-F is also reduced. Therefore, the amount of V-th shift caused by the positively charged trap states and electrons injecting into the channel from the donor-like states decreases with the O-2 flow rate increase. It is also shown experimentally that while the electrical characteristics of the a-IGZO TFTs are generally improved with the O-2 flow rate increase, they are degraded if an excess O-2 is introduced. An optimal O-2/Ar flow rate ratio of about 5 sccm/45 sccm is suggested to make a trade-off between the electrical performances and the gate-bias stress-induced V-th instability.

H2o Adsorption on Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

9.2: Mechanism of H<sub>2</sub>O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Role of H<sub>2</sub>O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

Role of H 2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Hydrogen-Related Instability of IGZO Field-Effect Transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTs

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress

Experimental Investigation on the Instability for NiO/β-Ga2O3 Heterojunction-Gate FETs under Negative Bias Stress

Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in A-Ingazno Thin Film Transistors

Vertical Electric Field-Induced Abnormal Capacitance–Voltage Electrical Characteristics in a-InGaZnO TFTs

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts